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교수진

교수정보의 상세 화면-2019
Download CV 이름 오일권 학력 박사 전공 지능형반도체공학전공(과)
정보	연구실 : 원천관 309호 연구실번호 : 2360 이메일 : ikoh@ajou.ac.kr 연구관심분야 : 반도체 소자 및 공정 홈페이지1 : https://sdpl.ajou.ac.kr/
학력	졸업연도/학교/학위 2016.08 연세대학교 박사
논문 및 연구활동	연구활동(주요논문) [논문] 이상훈, 권세훈, 노원태, 서승기, 이우재, 오일권, 김형준, Role of a surface hydroxyl group depending on growth temperature in atomic layer deposition of ternary oxides , JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A (Oct, 2023) [논문] Asir Intisar Khan, Eric Pop, H.-S. Phillip Wong, Shenjun Qin, Stacey F. Bent, 이유진, 오일권, Area-Selective Atomic Layer Deposition for Resistive Random-Access Memory Devices , ACS Applied Materials & Interfaces , pp.43087 -43093 (Sep, 2023) [논문] Hayrensa Ablat, 오일권, Nathaniel E. Richey, Solomon T. Oyakhire, Wenbo Zhang, William Huang, Yi Cui, Yufei Yang, Stacey F. Bent, Molecular Layer Deposition of Organic−Inorganic Hafnium Oxynitride Hybrid Films for Electrochemical Applications , ACS Applied Energy Materials , pp.5806 -5816 (May, 2023) [논문] 김강식, 김우희, 김형준, 이유진, 이종훈, 이한보람, 이홍섭, 오일권, Dysprosium Incorporation for Phase Stabilization of Atomic-Layer-Deposited HfO2 Thin Films , CHEMISTRY OF MATERIALS , pp.2312 -2320 (Mar, 2023) [논문] 최애림, 김도희, 김세연, 류승욱, 서승기, 이우재, 오일권, Reaction mechanism and film properties of the atomic layer deposition ofZrO2 thin films with a heteroleptic CpZr(N(CH3)2)3 precursor , APPLIED SURFACE SCIENCE , pp.157104 -157112 (Jan, 2023) 국제학술논문지 [논문] 이상훈, 권세훈, 노원태, 서승기, 이우재, 오일권, 김형준, Role of a surface hydroxyl group depending on growth temperature in atomic layer deposition of ternary oxides , JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A (Oct, 2023) [논문] Asir Intisar Khan, Eric Pop, H.-S. Phillip Wong, Shenjun Qin, Stacey F. Bent, 이유진, 오일권, Area-Selective Atomic Layer Deposition for Resistive Random-Access Memory Devices , ACS Applied Materials & Interfaces , pp.43087 -43093 (Sep, 2023) [논문] Hayrensa Ablat, 오일권, Nathaniel E. Richey, Solomon T. Oyakhire, Wenbo Zhang, William Huang, Yi Cui, Yufei Yang, Stacey F. Bent, Molecular Layer Deposition of Organic−Inorganic Hafnium Oxynitride Hybrid Films for Electrochemical Applications , ACS Applied Energy Materials , pp.5806 -5816 (May, 2023) [논문] 김강식, 김우희, 김형준, 이유진, 이종훈, 이한보람, 이홍섭, 오일권, Dysprosium Incorporation for Phase Stabilization of Atomic-Layer-Deposited HfO2 Thin Films , CHEMISTRY OF MATERIALS , pp.2312 -2320 (Mar, 2023) [논문] 최애림, 김도희, 김세연, 류승욱, 서승기, 이우재, 오일권, Reaction mechanism and film properties of the atomic layer deposition ofZrO2 thin films with a heteroleptic CpZr(N(CH3)2)3 precursor , APPLIED SURFACE SCIENCE , pp.157104 -157112 (Jan, 2023) [논문] Asir Intisar Khan, 오일권, 원병준, Christopher Perez, H-S Philip Wong, Heungdong Kwon, Kangsik Kim, Kenneth E Goodson, Krishna Saraswat, Maryann C Tung, Mehdi Asheghi, Pranav Ramesh, Xiangjin Wu, Zonghoon Lee, Eric Pop, Unveiling the effect of superlattice interfaces and intermixing on phase change memory performance , NANO LETTERS , pp.6285 -6291 (Jul, 2022) [논문] Asir Intisar Khan, 오일권, 원병준, Christopher Perez, H.-S. Philip Wong, Kathryn M. Neilson, Kenneth E. Goodson, Krishna Saraswat, Mehdi Asheghi, Pranav Ramesh, Xiangjin Wu, 권흥동, 김강식, 이종훈, Eric Pop, First Demonstration of Ge2Sb2Te5-Based Superlattice Phase Change Memory withLow Reset Current Density (~3 MA/cm2) and Low Resistance Drift (~0.002 at 105ºC) , Digest of Technical Papers - Symposium on VLSI Technology , pp.310 -311 (Jun, 2022) [논문] 오일권, Chi Thang Nguyen, Nathaniel E. Richey, Ralf Tonner, Stacey Bent, Tania E. Sandoval, Tzu-Ling Liu, 구본욱, 이한보람, Elucidating the Reaction Mechanism of Atomic Layer Deposition of Al2O3 with a Series of Al(CH3)xCl3–x and Al(CyH2y+1)3 Precursors , Journal of the American Chemical Society , pp.11757 -11766 (Jun, 2022) [논문] Josiah Yarbrough, 오일권, Daniel Grigianis, Fabian Pieck, Patrick Maue, Ralf Tonner, Stacey Bent, Tuning Molecular Inhibitors and Aluminum Precursors for the Area-Selective Atomic Layer Deposition of Al2O3 , CHEMISTRY OF MATERIALS , pp.4646 -4659 (May, 2022) [논문] 이유진, 오일권, 김형준, 남태욱, 서승기, 서진형, 석장현, 선상규, 송봉근, 윤휘, 이상훈, 이현호, Growth mechanism and electrical properties of tungsten films deposited byplasma-enhanced atomic layer deposition with chloride and metalorganic precursors , APPLIED SURFACE SCIENCE , pp.150939 -150945 (Aug, 2021) [논문] 우황제, 오일권, 김미소, 김형준, 서승기, 송봉근, 윤휘, 이유진, 정승민, Reaction Mechanisms of Non-hydrolytic Atomic Layer Deposition ofAl2O3 with a Series of Alcohol Oxidants , JOURNAL OF PHYSICAL CHEMISTRY C , pp.18151 -18160 (Aug, 2021) [논문] 이우재, 오일권, Susanta Bera, 배종성, 안정원, 우현재, 권세훈, Controllable size and crystallinity of Runanoparticles on a carbon support synthesized byfluidized bed reactor-atomic layer deposition forenhanced hydrogen oxidation activity , JOURNAL OF MATERIALS CHEMISTRY C , pp.17223 -17230 (Jun, 2021) [논문] 오일권, Nathaniel E. Richey,, Stacey F. Bent, Tania E. Sandoval, Tzu-Ling Liu,, Role of Precursor Choice on Area-Selective Atomic Layer Deposition , CHEMISTRY OF MATERIALS , pp.3926 -3935 (May, 2021) [논문] Houda Gaiji, Rizwan Khan, Sumaira Yasmeen, 문찬휘, 신상우, 윤재홍, 이한보람, 오일권, Self-Formation of Superhydrophobic Surfaces through InterfacialEnergy Engineering between Liquids and Particles , LANGMUIR , pp.5356 -5363 (Apr, 2021) [논문] 이유진, 오일권, 김현재, 김형준, 김호진, 남태욱, 서승기, 양준영, 유충근, 유혁준, 윤휘, 이청훤, 임성일, 최동욱, 최원준, Hydrogen Barriers Based on Chemical Trapping Using ChemicallyModulated Al2O3 Grown by Atomic Layer Deposition for InGaZnOThin-Film Transistors , ACS APPLIED MATERIALS & INTERFACES , pp.20349 -20360 (Apr, 2021) [논문] Xiaoyun Yu, 오일권, Dara Semple, Richard G Closser, Stacey Bent, Tzu-Ling Liu, William Trevillyan, Area-Selective Molecular Layer Deposition of a Silicon Oxycarbide Low-k Dielectric , CHEMISTRY OF MATERIALS , pp.902 -909 (Feb, 2021) 국제학술발표 [학술회의] 오일권, 김형근, Improved Leakage Currents of ALD ZrO2 by Controlling Surface Reaction with Plasma Source , AVS Pacific Rim Symposium on Surfaces, Coatings and Interfaces (PacSurf 2022) (Dec, 2022) [학술회의] 이민정, 오일권, 임동현, Study on the Reduction of Leakage Currents for Atomic Layer Deposition HfO2 Thin Films , KISM 2022 (Nov, 2022) [학술회의] 오일권, Study on Area-Selective Atomic Layer Deposition of Al2O3 with a Series of Al Precursors, , AVS 22nd International Conference on Atomic Layer Deposition (ALD 2022) (Jun, 2022) [학술회의] 오일권, Selective Pattern Fabrication by AS-ALD for Semiconductor Devices , International Union of Materials Research Societies - International Conference in Asia 2021 (Oct, 2021) [학술회의] 오일권, Reaction Mechanism of Area-Selective Deposition for Advanced Device Fabrication , Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (Aug, 2021) 국내학술발표 [학술회의] 오근하, 오일권, Bi-layered ZrO2/Y2O3 Structure for Ge-Based Devices Grown by Atomic LayerDeposition , 반도체학술대회 (Jan, 2022) [학술회의] 원병준, 오일권, 오근하, The Effect of Al2O3 Passivation Layer between ZrO2/Ge Substrate Depending onAnnealing Temperature , 반도체학술대회 (Jan, 2022) [학술회의] 송채영, 오일권, 최애림, Area-Selective Atomic Layer Deposition of HfO2 for RRAM Device Fabrication , 반도체학술대회 (Jan, 2022) [학술회의] 오일권, 황진석, The Effect of Post-depositing Annealing on the Electrical PropertiesZrO2/Al2O3/ZrO2 Thin Films , 반도체학술대회 (Jan, 2022) [학술회의] 오일권, Fundamentals of Bottom-up Fabrication of Selective Patterns forSemiconductor Devices , 반도체학술대회 (Jan, 2022) [학술회의] 오일권, 선택적 영역 원자층 증착법을 위한 표면반응 메커니즘: Al2O3 case 연구 , Korean Surface Engineering conference (Jun, 2021)
특허 및 기타	[특허] 오일권, 비저항 역행 원자층 증착 토폴로지 반금속 (출원) (10-2024-0018072) (Feb, 2024) [특허] 오일권, 강혜주, 신소연, 액체질량유량제어기 테스트장치 (출원) (10-2024-0000743) (Jan, 2024) [특허] 오일권, 임동현, PN형 반도체 형성 방법 (출원) (10-2023-0177991) (Dec, 2023) [특허] 오일권, 정이지, 주석 산화물 형성 방법 (출원) (10-2023-0177989) (Dec, 2023) [특허] 오일권, 디스프로슘이 도핑된 하프늄 옥사이드 박막 및 이의 제조 방법 (출원) (10-2023-0170871) (Nov, 2023) [특허] 오일권, 원병준, 이민정, 원자층 증착을 이용한 절연막 형성 방법 (출원) (10-2023-0079932) (Jun, 2023) [특허] 오일권, 캐패시터 및 캐패시터의 제조 방법 (출원) (10-2023-0018930) (Feb, 2023) [특허] 오일권, VHF를 이용한 PE-ALD 장치 및 방법 (출원) (18/090,242) (R0420US) (Dec, 2022) [특허] 오일권, 3차원 구조를 갖는 멤리스터 소자 및 그 제조방법 (출원) (10-2022-0172772) (Dec, 2022) [특허] 오일권, 원자 분포 조절을 통한 극초박막의 결정성 제어 (출원) (10-2022-0164227) (Nov, 2022) [특허] 오일권, VHF를 이용한 PE-ALD 장치 및 방법 (출원) (10-2021-0189551) (Dec, 2021)
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